PXT2222A BEC-P1P

PXT2222A NPN Plastic-Encapsulate Transistors SOT-89-3L Features z z Epitaxial planar die construction Complementary PNP Type available(PXT2907A) 1.70 0.42 0.1 0.1 0.46 0.1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO IC Emitter-Base Voltage Collector Current -Continuous 6 600 V mA PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55 ~150 ℃ Dimensions in millimeters ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage V(BR)CBO IC= 10μ A,IE=0 75 V Collector-emitter breakdown voltage V(BR)CEO IC= 10mA, IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=10μA, IC=0 6 V Collector cut-off current ICBO VCB=60V, IE=0 0. 01 μA Emitter cut-off current IEBO VEB= 5V , IC=0 0. 01 μA hFE(1) VCE=10V, IC= 0.1mA 35 hFE(2) VCE=10V, IC= 1mA 50 hFE(3) VCE=10V, IC= 10mA 75 hFE(4) VCE=10V, IC= 150mA 100 hFE(5) VCE=1V, IC= 150mA 50 hFE(6) VCE=10V, IC= 500mA 40 VCE(sat) IC=500mA, IB= 50mA 1 V VCE(sat) IC=150mA, IB=15mA 0.3 V VBE(sat) IC=500mA, IB=50mA 2.0 V VBE(sat) IC=150mA, IB=15mA 0.6 1.2 V VCE=10V, IC=20mA f=100MHz 300 DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage 300 MHz Transition frequency fT Output Capacitance Cob VCB=10V, IE= 0,f=1MHz 8 pF Delay time td 10 ns Rise time tr VCC=30V, IC=150mA VBE(off)=0.5V,IB1=15mA 25 ns Storage time tS 225 ns Fall time tf 60 ns www.shunyegroup.com.cn VCC=30V, IC=150mA IB1=- IB2= 15mA 1/3 A,May,2011 PXT2222A NPN Plastic-Encapsulate Transistors Typical Characteristics Static Characteristic COLLECTOR CURRENT 700uA 0.15 600uA 500uA 0.10 400uA Ta=25℃ 100 200uA COMMON EMITTER VCE= 10V IB= 100uA 4 6 8 10 12 VCEsat —— 100 14 10 16 1 IC Ta=25℃ β=10 10 10 IC IC —— 600 (mA) IC 900 Ta=25℃ 600 Ta=100 ℃ β=10 1 10 COLLECTOR CURREMT (mA) VBE fT 500 600 100 —— IC (mA) IC (MHz) 600 IC 300 600 100 COLLECTOR CURREMT 100 VBEsat —— 1200 Ta=100 ℃ 1 10 COLLECTOR CURRENT VCE (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 2 1000 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) Ta=100℃ 300uA 0.05 COLLECTOR-EMITTER VOLTAGE 100 TRANSITION FREQUENCY 10 T =2 5℃ a T= a 10 0℃ fT IC (mA) DC CURRENT GAIN 800uA 0 COLLECTOR CURRENT IC 900uA 0.00 1 COMMON EMITTER VCE= 10V 100 COMMON EMITTER VCE=10V Ta=25℃ 0.1 10 0 300 600 900 1200 1 10 100 Cob/Cib —— VCB/VEB COLLECTOR POWER DISSIPATION PC (mW) f=1MHz IE=0/IC=0 (pF) C Cib 10 Cob 1 REVERSE VOLTAGE www.shunyegroup.com.cn 10 V (V) PC 600 Ta=25 ℃ 1 0.1 100 COLLECTOR CURRENT BESE-EMMITER VOLTAGE VBE (mV) CAPACITANCE —— 1mA hFE 0.20 hFE 1000 COMMON EMITTER Ta=25℃ IC (A) 0.25 20 —— IC (mA) Ta 500 400 300 200 100 0 0 25 50 75 AMBIENT TEMPERATURE 125 100 T 150 (℃ ) 2/3 A,May,2011 PXT2222A NPN Plastic-Encapsulate Transistors Pinning information Pin PinB PinC PinE Simplified outline Symbol Base Collector Emitter PXT2222A P1P SOT-89-3L Suggested Pad Layout www.shunyegroup.com.cn 3/3 A,May,2011